METROLOGY FOR SEMICONDUCTOR CHARACTERIZATION AND PROCESS MONITORING

GEKA is recognized for its non-destructive metrologies for semiconductor process monitoring.  For over 25 years, prominent device and wafer manufacturers worldwide have chosen tools introduced by GEKA-founded companies. Our tools have received multiple awards and have been featured in leading semiconductor journals.

 

 NEW TECHNOLOGY - NEW PRODUCTS

DSLA

Defect Specific Lifetime Analysis

A novel patented technology combining features of the photoconductance and photovoltaic techniques including surface photovoltage. It allows to distinguish characteristics associated with the point defects and extended crystal imperfections including surface.

J. App. Physics 112, 063715 (2012)#

E. Kamieniecki, "Defect specific photoconductance: Carrier recombination through surface and other extended crystal imperfections"


DEVICE WAFERS

DSPC© simultaneously characterizes junction and bulk regions of the multi-layer wafers structures with embedded homo- or hetero-junctions.


CZT RADIATION DETECTORS

The key factor affecting performance of semiconductor radiation detectors is quality of the starting material. Defect Specific Photo-Conductance (DSPC©) allows for the rapid, non-contact evaluation of CdZnTe (CZT) substrate parameters directly related to the detector performance. 




SURFACE CONTAMINATION

Si Clean/Etch/Oxidation

DSPC© simultaneously characterizes surface and bulk regions without any additional wafer processing. This allows monitoring of the surface contamination directly after cleaning and etching offering unique solution to the in-line process control not available with other techniques.

Surface contamination and damage is monitored by measuring the surface charge and the surface carrier capture velocity and/or surface state density. Simultaneous monitoring of bulk contamination is provided by measuring bulk carrier lifetime that does not require surface passivation.

 

Photovoltaics

DSPC© allows simultaneous determination of the emitter recombination velocity (eJRV) and the absolute steady-state bulk  carrier recombination lifetime.


HIGH-RESISTIVITY SUBSTRATES
   CdZnTe,  ...


The limiting factor degrading the energy resolution of semiconductor gamma-ray detectors is hole trapping by point and extended defects. DSPC© identifies the type of defects and their impact on the performance of detectors. 




LFM/A100/1

Compact HF-RF table-top R&D instrument for non-contact characterization of irregular samples and wafers larger than 5x5 mm and up to 100x100 mm.

Rapid, non-contact  mapping of the basic material characteristics and defectiveness of elemental and compound semiconductors of resistivity spanning 10 orders of magnitude from few ohm-cm to above 1010 ohm-cm.

 

 

Effective carrier lifetime in CdZnTe.