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RadDet

RADIATION DETECTORS
Substrate characterization of high-resistivity semiconductors

The key factor affecting performance of the radiation detectors is quality of the starting semiconductor material. Conventionally the quality of such materials is determined measuring effective carrier lifetime using a 2-step process  requiring fabrication of contacts on the sample. DSPC based LFM100/1 system replaces this 2-step process with a single non-contact direct measurement avoiding problems associated with the presence of the electrodes.

RD Correlation





Electrostatic Trapping in high-resistivity 
CdZnTe
The dominant problem limiting the energy resolution of compound semiconductor based radiation detectors is trapping of charge carriers. Particularly important are extended crystal imperfections responsible for "electrostatic trapping" of excess holes. DSPC allows characterization of micro- and nano-extended crystal defects responsible for "electrostatic trapping" of excess holes that critically limits performance of radiation detectors.
J. App. Physics 114_193701 (2013)#
J. App. Physics 116, 193702 (2014)#





Rapid mapping of the carrier lifetime in high-resistivity, detector-grade semiconductors


Characterization of micro- and nano-extended crystal defects responsible for "electrostatic trapping" of excess holes that critically limits performance of radiation detectors.



Effective carrier lifetime in 
CdZnTe




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