GEKA ASSOCIATES, with a proven track record in introducing breakthrough equipment for microelectronics industry is seeking a partnership with an industrial entity interested in the productization of two products:

  • A patented RF-based, non-contact electrical measurement system referred to as Defect Specific Lifetime Analyzer (DSLA) for in-line process monitoring in microelectronic devices manufacturing

  • A proprietary photo-thermal surface cleaning module (ROST) for elipsometry and other applications identified by device manufacturers including a pre-clean treatment in gate oxidation, silicon epitaxy, and wafer bonding.

GEKA ASSOCIATES is also seeking a collaboration with an established R&D center interested in the development of new inductive radiation detectors and flat panel digital radiography for industrial, medical, security, and space applications.

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GEKA product are continuation of the past development and productization efforts that were focused on phenomena and systems involving the interaction of electromagnetic radiation with semiconductors. GEKA development started in 1985 with invention of selenium-based digital mammography (starting with US patents 4,544,887 and 4,663,526) and evolved into semiconductor metrology and advanced surface processing. The products initiated by GEKA were developed and introduced on the market by GEKA founded companies: Optical Diagnostic Systems, Inc, SemiTest, Inc. and QC Solution, Inc.

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For more information contact: info@gekallc.com

NON-CONTACT IN-LINE GEKA METROLOGY

Currently used Surface Charge Analyzer and Surface Charge Profiler can not be used for in-line monitoring of product wafers. They require monitor wafers that can not be returned into production line. In spite of this limitation, in case of batch wafer processing such as thermal oxidation, low pressure chemical vapor deposition (LPCVD) of silicon nitride, resist strips and wafer cleaning processes, monitor wafers can be effectively used for monitoring of the processing flow. However with increasing wafer diameter and tightening requirements to achieve finer features a need for high quality deposition and etch processes is driving .towards single wafer processing that eliminates usage of monitor wafers.

Defect Specific Lifetime Analyzer [DSLA©]

E. Kamieniecki, J. App. Physics 112, 063715 (2012); Patents: US 7,898,280,B2; US 8,896,338,B2

This deficiency of existing metrologies are addressed by Defect Specific Lifetime Analyzer (DSLA) which is based on the proprietary analysis of the time dependent density of optically generated charge carriers, DSLA simultaneously differentiates properties of the surface and bulk of semiconductors focusing, depending on the probe configuration, on the surface or bulk regions. Due to wide probe-semiconductor distance DSLA is particularly useful for in-line process monitoring of product wafers in microelectronic device manufacturing and high-energy radiation detectors.

Since RF-DSLA measurements do not involve current flow and the collection of charges at the electrodes but are solely based on the absorption of the RF radiation, DSLA can be used for the characterization of monocrystalline, polycrystalline and amorphous materials.

Since RF-DSLA measurements do not involve the collection of charges at the electrodes but are solely based on the absorption of the RF radiation, DSLA can be used for the characterization of monocrystalline, polycrystalline and amorphous materials.

The capabilities of the DSLA in in-line monitoring of the photo-current radiation detectors fabrication are located here DSLA . In this application DSLA not only identifies point and extended defects that directly affect performance of the detectors but also showed that electrode formation is critical factor affecting reproducibility of the fabrication process.

ON-LINE GEKA METROLOGY

1987: The Surface Charge Analyzer (SCA) addressed semiconductor process monitoring was introduced by GEKA founded SemiTest, Inc. The company shipped several hundred systems to major semiconductor manufacturers in US, Japan, and Europe including Intel, IBM, Motorola, Texas Instruments, NEC, Hitachi, and Siemens. SCA is used to control a wide range of advanced processes, including furnace operations, and wafer cleaning.
After more than 30 years the sales of this tool continue
under new ownership.
Protected by US 4,827,212 and 7 additional patents: US 4,544,887...US 6,315,574.

1989: The Surface Charge Analyzer (SCA) introduced by Semitest, Inc. featured by Semiconductor International

1990: The Surface Charge Analyzer (SCA) was selected product of the year by Semiconductor International.

Advanced microelectronic devices are made on epitaxial layers (epi) and quality control of epi formation is one of the critical steps in device manufacturing. In 1993 GEKA founded QC Solution, Inc. and introduced Surface Charge Profiler (SCP) which addressed monitoring critical parameters of epi layers. Customers of SCP include all major wafer manufacturers in the world as well as a number of leading device manufacturers.
Protected by US 4,827,212 and 4 additional patents US 6,388,455... US 6,967,490.

2001: The Surface Charge Profiler (SCP) introduced by QC Solutions, Inc. was selected product of the year by Semiconductor International.

pHOTO-thERMAL sURFACE cLEANING

Photo-thermal cleaning (ROST) of product wafers

GEKA proprietary non-contact In-Line Photo-Thermal Cleaning Modules are tailored to customer specified applications for thin film measurements (ellipsometry) and final pre-clean treatment in gate oxidation, silicon epitaxy, and wafer bonding applications. The modules design will allow their integration into existing metrology and processing systems. In-line ROST modules are not intended to replace chemical cleaning e.g., after long storage of the wafers but suplement them with final clean before next processing step.

GEKA proprietary In-Line Photo-Thermal Cleaning Modules are tailored to customer specified applications for thin film measurements (ellipsometry) and final pre-clean treatment in gate oxidation, silicon epitaxy, and wafer bonding applications. The modules design will allow their integration into existing metrology and processing systems. In-line ROST modules are not intended to replace chemical cleaning e.g., after long storage of the wafers but suplement them with final clean before next processing step.

On-Line PHOTO-THERMAL CLEANING TOOL (ROST)

Non-contact HYDROCARBON REMOVING TOOL FOR THIN-FILM MEASUREMENTS
(Elipsometry)

Miniaturization of semiconductor devices requires control of oxide thickness at sub-atomic levels and substantially reducing surface contamination by removing the hydrocarbon layer along with the species deposited on it. While surface contamination at that level was becoming a critical issue, the existing methods did not offer the efficiency required in device manufacturing process. To address this issue QC Solution, Inc. founded by GEKA developed a fast, non-contact, and non-invasive surface cleaning technology based on the photo-thermal phenomena and introducing system dubbed "Rapid Optical Surface Treatment" (ROST).1999: The first application of ROST technology, featured in Solid State Technology (Sep, 1999), was for thin-film measurements. It was demonstrated that ROST lifts off the absorbed dipol layer from the surface of a wafer, removing with it any deposited species in much shorter time and more effectively than standard wet cleaning processes. The process is done at temperature below 300 degree C in <1min. [2,3]

Patents: US 6,325,078; US 6,803,588 and WO 2004/107433

In-Line PHOTO-THERMAL CLEANING MODULES


GEKA proprietary In-Line Photo-Thermal Cleaning Modules are tailored to customer specified applications for thin film measurements (ellipsometry) and final pre-clean treatment in gate oxidation, silicon epitaxy, and wafer bonding applications. The customer tailored modules allow their integration into existing metrology and processing systems.

Note: In-line ROST modules are not intended to replace chemical cleaning after e.g., long storage of the wafers but suplement currently used chemical treatment with a final clean before next processing step.







A. Danel, C.L. Tsai, K. Shanmugasundaram, F. Tardif, E. Kamieniecki and J. Ruzyllo, Cleaning of Si Surfaces by Lamp Illumination, Presented at UCPSS, Sep. 16, 18, 2002, Oostende, Belgium.