Publications & Patents

RADIATION DETECTORS & INDUCTIVE IMAGING

LATENT ELECTROSTATIC IMAGING - SPV

  1. E. Kamieniecki, Method of Measuring Photo-Induced Voltage at the Surface of Semiconductor Materials, US 4,544.887, Oct. 1, 1985.

  2. E. Kamieniecki, Nondestructive Readout of a Latent Electrostatic Image Formed on an Insulating Material, US 4,663,526, May 5, 1987.

  3. E. Kamieniecki, W. C. Goldfarb, Nondestructive Readout of a Latent Electrostatic Image Formed on an Insulating Material, US 4,833,324, May 23, 1989.

  4. E. Kamieniecki, Nondestructive Readout of a Latent Electrostatic Image Formed on an Insulating Material, US 4,847,496, Jul. 11, 1989.

  5. E. Kamieniecki, L. Reiss, W.C. Goldfarb, Nondestructive Readout of a Latent Electrostatic Image Formed on an Insulating Material, US 4,873,436, Oct. 10, 1989.

INDUCTIVE RADIATION DETECTORS & INDUCTIVE RADIATION IMAGING

  1. E. Kamieniecki, Inductive Radiation Detector, US 10,018,738, Jul, 10, 2018.

  2. E. Kamieniecki, Inductive Radiation Detector, US 10,338,237, Jul, 2, 2019.

  3. E. Kamieniecki, Electrostatic Hole Trapping Radiation Detectors, US 10,429,522, Oct, 1, 2019.

  4. E. Kamieniecki, , Inductive Radiation Detector, WO 2017/161152.

  5. E. Kamieniecki, Critical Aspects of Surface Preparation in Radiation Detector Fabrication, DOI: 10.13140/RG.2.2.19149.26086.

  6. E. Kamieniecki, Electrode subsurface depletion zones limiting reproducibility and performance of CZT radiation detectors, DOI: 10.13140/RG.2.2.28902.65608, Jul, 2020.

Surface Charge Analyzer (SCA) & Surface Charge Profiler (SCP)

  1. E. Kamieniecki, (Semitest, Inc.) Noninvasive Method and Apparatus for Characterization of Semiconductors, US 4,827,212, May 2, 1989.1.

  2. E. Kamieniecki, W.C. Goldfarb, M. Wollowitz, (Semitest, Inc.) Apparatus for Making Surface Photovoltage Measurements of a Semiconductor, US 4,891,584, Jul. 2, 1990.

  3. L. Reiss, E. Kamieniecki, Apparatus and Method for Making Surface Photovoltage Measurements of a Semiconductor, US 5,087,876, Feb. 11, 1992.

  4. E. Kamieniecki, W.C. Goldfarb, M. Wollowitz, Apparatus for Making Surface Photovoltage Measurements of a Semiconductor, US 5,091,691, Feb. 25, 1992.

  5. E. Kamieniecki, J. Ruzyllo, Real-Time In-Line Testing of Semiconductor Wafers, US 5,661,408, Aug. 26, 1997.

  6. E. Kamieniecki, J. Ruzyllo, Real-Time In-Line Testing of Semiconductor Wafers, US 6,069,017, May. 30, 2000.

  7. E. Kamieniecki, J. Ruzyllo, Method for Real-Time In-Line Testing of Semiconductor Wafers, US 6,315,574, Nov. 13, 2001.

  8. E. Kamieniecki, K.E. Kamieniecki, J.L. Sauer, J. Butkiewicz, Method and Apparatus for Simulating a Surface Photo-Voltage in a Substrate, US 6,388,455, May 14, 2002.

  9. E. Kamieniecki, J. Ruzyllo, Real-Time In-Line Testing of Semiconductor Wafers, US 6,909,302, Jun. 21, 2005.

  10. E. Kamieniecki, J. Ruzyllo, Real-Time In-Line Testing of Semiconductor Wafers, US 6,924,657, Aug. 2, 2005.

  11. E. Kamieniecki, J. Ruzyllo, Real-Time In-Line Testing of Semiconductor Wafers, US 6,967,490, Nov. 22, 2005.

  12. E. Kamieniecki (Nanometrics, Inc.) Apparatus and Method for Electrical Characterization by Selecting and Adjusting the Light for a Target Depth of a Semiconductor, US 7,663,385, Feb. 16, 2010.

  13. E. Kamieniecki (Nanometrics, Inc.) Apparatus and Method for Electrical Characterization by Selecting and Adjusting the Light for a Target Depth of a Semiconductor, US 8,232,817, Jul. 31, 2012.

  14. E. Kamieniecki (Nanometrics, Inc.) Apparatus and Method for Electrical Characterization by Selecting and Adjusting the Light for a Target Depth of a Semiconductor, US 9,110,127, Aug. 18, 2015.

Rapid Optical Surface Treatment (ROST)

CLEANING

  1. E. Kamieniecki, Apparatus and Method for Rapid Photo-Thermal Surface Treatment, US 6,325,078, Dec. 4, 2001.

  2. Adrian Danel, Francois Tardif, Emil Kamieniecki, Novel pretreatment for thin-film measurements, Solid State Technology 42(9), August 1999.
    https://www.researchgate.net/project/Process-monitoring-in-semiconductor-device-manufacturing

  3. Adrien Danel, Chia Liang Tsai, Karthikeyan Shanmugasundaram, Show all 6 authors, Jerzy Ruzyllo, Cleaning of Si Surfaces by Lamp Illumination, Presented at UCPSS, Sep. 16 -18, 2002, Oostende, Belgium, December 2001, Solid State Phenomena 92:16-18, DOI: 10.4028/www.scientific.net/SSP.92.195.

  4. E. Kamieniecki, Apparatus and Method for Rapid Photo-Thermal Surface Treatment, US 6,325,588, Oct. 12, 2004.

  5. François Tardif, Adrien Danel, Emil Kamieniecki, James Harrington, Extending ellipsometry capabilities for ultrathin gate oxide metrology using rapid optical surface treatment technology, Proc. SPIE 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V, (3 September 1999); DOI: 10.1117/12.361300, http://dx.doi.org/10.1117/12.361300.

  6. Chiun-Lung Tsai, P. Roman, C.-T. Wu, Show all 7 authors' J. Ruzyllo, Control of Organic Contamination of Silicon Surfaces Using White Light Illumination in Ambient Air, December 2002, Journal of The Electrochemical Society 150(1):G39-G44, DOI: 10.1149/1.1527053 *Comment: Conclusion from Fig. 7 incorrect

  7. DOPANT ACTIVATION
     E. Kamieniecki (Nanometrics), Apparatus and Method for Rapid Photo-Thermal Dopant Activation in Semiconductors, US WO 2004/107433, Dec. 9, 2004.

Defect Specific Lifetime AnalysER (DSLA)

  1. E. Kamieniecki, Electrical Characterization of Semiconductor Materials, US 7,898,280, Mar. 01, 2011

  2. E. Kamieniecki, Defect specific photoconductance: Carrier recombination through surface and other extended crystal imperfections, J. App. Physics 112, 063715 (2012), 114, 193701 (2013)

  3. E. Kamieniecki, Electrical Characterization of Semiconductor Materials, US 8,896,338, Nov. 25, 2014.

  4. E. Kamieniecki, Critical Aspects of Surface Preparation in Radiation Detector Fabrication, DOI: 10.13140/RG.2.2.19149.26086.

  5. E. Kamieniecki, Electrical Characterization of Semiconductor Materials, US 7,898,280, Mar. 01, 2011;
    US 8,896,338, Nov. 25, 2014.